型号:

NSS1C200LT1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS PNP 100V 3A SOT-23
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
NSS1C200LT1G PDF
标准包装 1
系列 -
晶体管类型 PNP
电流 - 集电极 (Ic)(最大) 2A
电压 - 集电极发射极击穿(最大) 100V
Ib、Ic条件下的Vce饱和度(最大) 250mV @ 200mA,2A
电流 - 集电极截止(最大) -
在某 Ic、Vce 时的最小直流电流增益 (hFE) 120 @ 50mA,2V
功率 - 最大 490mW
频率 - 转换 120MHz
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3(TO-236)
包装 剪切带 (CT)
其它名称 NSS1C200LT1GOSCT
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